characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) 050-5591 rev c 11-2004 symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms ana volts min typ max 1000 21 0.500 250 1000100 24 apt10050b2vfr_lvfr 1000 2184 3040 520 4.16 -55 to 150 300 2150 2500 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com maximum ratings all ratings: t c = 25c unless otherwise specified. apt10050b2vfr apt10050lvfr 1000v 21a 0.500 ?? ?? ? power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. identical specifications: t-max? or to-264 package faster switching 100% avalanche tested lower leakage power mos v ? t-max ? g d s to-264 b2vfr lvfr downloaded from: http:///
apt10050b2vfr_lvfr 050-5591 rev c 11-2004 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 dynamic characteristicssource-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise timexxdx turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 0.6 ? min typ max 6600 7900 595 830 290 430 335 500 29 45 165 250 16 32 13 26 59 90 81 6 unit pf nc ns min typ max 2184 1.3 18 t j = 25c 300 t j = 125c 600 t j = 25c 1.7 t j = 125c 4.8 t j = 25c 12 t j = 125c 19 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 11.34mh, r g = 25 ? , peak i l = 21a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s -i d [cont.], di / dt = 100a/s, v dd - v dss , t j - 150c, r g = 2.0 ? , v r = 200v. apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.24 40 unitc/w characteristicjunction to case junction to ambient downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 100 200 300 400 500 0 4 8 12 16 20 02468 01 02 03 04 05 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt10050b2vfr_lvfr i d = 0.5 i d [cont.] v gs = 10v 5040 30 20 10 0 1.31.2 1.1 1.0 0.9 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 5040 30 20 10 0 5040 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 050-5591 rev c 11-2004 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v t j = +125c t j = +25c t j = -55c 5v 4.5v 4v 5v 4.5v 4v v gs =5.5v, 10v & 15v v gs =5.5v, 10v & 15v normalized to v gs = 10v @ 0.5 i d [cont.] downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 500 1000 .01 .1 1 10 50 0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0 apt10050b2vfr_lvfr t c =+25c t j =+150c single pulse 100 5010 51 .5.1 2016 12 84 0 30,00010,000 5,0001,000 500100 100 5010 51 050-5591 rev c 11-2004 operation here limited by r ds (on) 10s100s 1ms 10ms 100ms dc t j =+150c t j =+25c v ds =500v v ds =200v v ds =100v c rss c oss c iss i d = i d [cont.] 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain source gate these dimensions are equal to the to-247 without the mounting hole. drain 2-plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) t-max tm (b2) package outline to-264 (l) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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